Deposition simulation
Build a planar or trench substrate, set the precursor, co-reactant and pulses, then watch the film grow in 3D and read the results report.
ALDKIT / Film growth
Explore how molecular adsorption and repeated ALD cycles build a three-dimensional film. PD4ALD brings substrate design, growth trajectories and structural analysis into one workspace, while complementary nucleation models help interpret experimental growth data.
TMA and DMAI in the current growth interface.
Planar and groove configurations on Cu(111).
JPCC, Parsons and SAMS in the companion analysis module.
In the ALDKIT desktop app
Build a planar or trench substrate, set the precursor, co-reactant and pulses, then watch the film grow in 3D and read the results report.
Choose a small-molecule inhibitor from the inhibitor database, place it on Cu(111), then simulate the ALD (TMA/H₂O) cycles that follow.
Build and optimise a substrate, then generate precursor adsorption configurations in batches.
Generate dissociation-reaction configurations and compute them in batches with a machine-learned potential.
Identify nucleation delay from experimental thickness, coverage or nucleus-density data on intrinsic or SAM surfaces, and get process suggestions.
A virtual ALD process bench: choose a target film such as HfO₂, ZrO₂ or Al₂O₃, configure the recipe, run kinetic Monte Carlo and analyse the results.
The scientific questions
Two films can have a similar average thickness and very different shapes. Examining the atomic structure alongside cycle-dependent trends helps connect process choices with the morphology produced by a particular model.
Inspect the transition from a configured substrate to a developing film. Three-dimensional trajectories reveal the spatial distribution of deposited and adsorbed species.
Compare planar growth with deposition inside a groove. Inspect cross-sections to distinguish vertical growth, lateral expansion and the shape of the developing film.
Read structural snapshots together with thickness, growth-per-cycle and modeled mass histories. This makes it easier to compare runs without reducing every result to a single final value.
Build the experiment
The growth workspace makes the main modeling choices explicit before a run. Preview the atomic geometry, select a supported precursor and pulse schedule, then set temperature, precursor partial pressure and cycle count.
Set physical dimensions for the substrate and active region, or configure a groove with a defined width and depth. Dimensions are resolved to the atomic template so the preview and calculation use the same structure.
TMA and DMAI each have three pulse/purge presets in the current interface. Temperature, partial pressure and cycle count provide additional controls for exploring the implemented growth models.
Read the result
The result workspace combines an interactive growth view with quantitative analysis. Every quantity has a modeling convention: the useful comparison is between runs whose geometry, parameters and analysis settings are understood.
| Result | Use it to explore | Interpretation |
|---|---|---|
| 3D growth and sections | Where material accumulates and how the profile evolves. | Views represent recorded model structures; the section outline is a display envelope. |
| Thickness and GPC | Growth trends over the simulated cycle sequence. | GPC is the model's cumulative-average thickness per cycle. |
| QCM-equivalent mass | How the modeled non-substrate atomic population changes with recorded time. | Calculated atomic mass per active area; not an experimental frequency trace. |
| Porosity and oxygen analysis | Geometric voids, composition, coordination and spatial environments. | Geometric and cutoff-dependent diagnostics; they do not directly measure oxygen-vacancy concentration. |
A useful first study
A focused comparison is often more informative than a large parameter sweep. Begin with one supported substrate and chemistry, then change one setting while keeping the others fixed.
Preview the substrate and active region, choose a precursor schedule, and record the temperature, pressure and cycle count. Save the completed trajectory and result data.
Compare another supported pulse schedule or temperature while preserving the substrate and analysis conventions. Read the structures at matching cycle counts.
Use the 3D view and section profile to explain differences in thickness, GPC and modeled mass. Treat unexpected trends as questions to investigate against the model assumptions and experimental evidence.
Complementary analysis
The companion nucleation module fits experimental thickness, coverage and nucleation-density data using JPCC, Parsons or SAMS models. Together, forward growth simulation and data fitting offer different ways to examine how a film develops.
Explore incubation, growth-rate behavior or nucleation on inherent and SAM-modified surfaces with the appropriate model. Parameters can be fitted or held fixed to reflect the information available.
The ALDKIT growth interface supports Cu(111) planar and groove substrates with TMA/DMAI presets. Other materials and chemistries require a corresponding model and validation. ALDHub is currently a public review site; login and simulation tools are not yet enabled.
Explore furtherYOUR NEXT RESEARCH QUESTION
Discover what each module can do, then choose the workflow that fits your science.