ALDKIT research suite · MDNM team, HUST

Model every layer, from precursor to reactor.

ALDKIT links 15,074 published process records with atomistic film-growth and reactor-scale simulation, so a literature search can become a simulated experiment.

15,074 process records 770 precursors 6,811 linked papers Snapshot 30 Jul 2026

Grow a film

Cycles
1,000
Thickness
110 nm
Per cycle
1.1 Å

Wafer color is computed from film thickness: thin-film interference on silicon at normal incidence in daylight. Growth per cycle uses typical literature values. #4783C5

One suite, three scales

Start with the chemistry, follow the film, then the reactor.

Each module answers a different question about the same process. Use one on its own or carry results from one to the next.

Molecules and literature

Materials database

Search precursors by name, formula or CAS number, compare reported temperature, pulse, purge and growth rate, then trace each recipe to its paper.

Precursor entries by elementtop 5
  • Si67
  • Zr32
  • Ti31
  • Hf28
  • Co27
Open the database page

Atoms to nanometres

Film growth

Simulate nucleation and film evolution on Cu(111), on a flat surface or inside a groove, and read thickness, growth per cycle and modeled mass cycle by cycle.

Current interfaceALDKIT
Precursors
TMA · DMAI
Substrate
Cu(111)
Geometry
planar · groove
Outputs
thickness · GPC · QCM mass
Nucleation fits
JPCC · Parsons · SAMS
Film growth module

Reactor, millimetres to centimetres

Process simulation

Follow precursor delivery, purge and surface reactions in cross-flow, tube and lid-gas-ring chambers, for Al₂O₃ (TMA/H₂O) and ZrO₂ (CpZr/O₃) recipes.

Example output: coverage in a holeby depth
Process simulation module

The team

Built by the MDNM team at Huazhong University of Science and Technology.

ALDKIT brings materials data and simulation workflows into one shared research environment.

Meet the team

Start from the film you need to grow.

Search the literature, check the conditions, then simulate the growth and the reactor.